THÔNG SỐ Module Type Internal SSD Form Factor M.2 2280 Interface PCIe Gen4x4 NAND Flash 3D TLC Sequential Read/Write 512GB —sequential read up to 7000MB/s, write up to 3000MB/s Random Read/Write 512GB —random write (4K, QD=32) up to 200/550K IOPS Operating Temperature 0° C to 70° C (32°F to 158°F) Storage Temperature -40° C to 85° C (-40°F to 185°F) Shock 1500G, duration 0.5ms, Half Sine Wave Power Consumption Active write: 6570mW Active read: 5587mW (Maximum) Vibration 10~2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z) TBW 512GB: 250TB DWPD 0.44 MTBF 1,500,000 Hours